Email this article Semiconductor Plasma Antennas Formed by Laser Radiation
- Authors: Bogachev N.N.1,2,3, Gusein-zade N.G.1,3, Zhluktova I.V.1, Kazantsev S.Y.1, Kamynin V.A.1, Podlesnykh S.V.1, Rogalin V.E.4, Trikshev A.I.1, Filatova S.A.1, Tsvetkov V.B.1,5, Shokhrin D.V.2
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Affiliations:
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- MIREA—Russian Technological University
- Pirogov Russian National Research Medical University
- Institute for Electrophysics and Electric Power, Russian Academy of Sciences
- National Nuclear Research University Moscow Engineering Physics Institute
- Issue: Vol 45, No 12 (2019)
- Pages: 1223-1225
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208507
- DOI: https://doi.org/10.1134/S1063785019120174
- ID: 208507
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Abstract
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
About the authors
N. N. Bogachev
Prokhorov General Physics Institute of the Russian Academy of Sciences; MIREA—Russian Technological University; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991; Moscow, 119454; Moscow, 117997
N. G. Gusein-zade
Prokhorov General Physics Institute of the Russian Academy of Sciences; Pirogov Russian National Research Medical University
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991; Moscow, 117997
I. V. Zhluktova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991
S. Yu. Kazantsev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Author for correspondence.
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991
V. A. Kamynin
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991
S. V. Podlesnykh
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991
V. E. Rogalin
Institute for Electrophysics and Electric Power, Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Russian Federation, St. Petersburg, 191186
A. I. Trikshev
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991
S. A. Filatova
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991
V. B. Tsvetkov
Prokhorov General Physics Institute of the Russian Academy of Sciences; National Nuclear Research University Moscow Engineering Physics Institute
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119991; Moscow, 115409
D. V. Shokhrin
MIREA—Russian Technological University
Email: s-kazantsev@mail.ru
Russian Federation, Moscow, 119454
