The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon

D. I. Bilenko; V. V. Galushka; E. A. Zharkova; V. I. Sidorov; D. V. Terin; E. I. Khasina

doi:10.1134/S1063785017020031

The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon

Autores: Bilenko D.I.¹, Galushka V.V.¹, Zharkova E.A.¹, Sidorov V.I.¹, Terin D.V.¹, Khasina E.I.¹
Afiliações:
1. Chernyshevsky Saratov State University
Edição: Volume 43, Nº 2 (2017)
Páginas: 166-168
Seção: Article
URL: https://journals.rcsi.science/1063-7850/article/view/203355
DOI: https://doi.org/10.1134/S1063785017020031
ID: 203355

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The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/p-Si/Al structures. Long-term stable switched-state memory in the region of the I–V curve hysteresis is revealed. This effect is controlled by the irradiation dose.