The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
- Autores: Sachenko A.1, Belyaev A.1, Boltovets N.2, Konakova R.1, Vitusevich S.1, Novitskii S.1, Sheremet V.1, Pilipchuk A.3
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Afiliações:
- V.E. Lashkaryov Institute of Semiconductor Physics
- Orion Research and Production Enterprise
- Institute of Physics
- Edição: Volume 42, Nº 6 (2016)
- Páginas: 649-651
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199767
- DOI: https://doi.org/10.1134/S1063785016060286
- ID: 199767
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Resumo
Resistivity ρc of InP- and GaAs-based ohmic contacts has been measured in a temperature range of 4.2–300 K. Both temperature dependences are nonmonotonic and exhibit minima at T = 50 K for InP and T = 150 K for GaAs. The nonmonotonic ρc(T) curves for GaAs contacts have been observed for the first time. The obtained experimental temperature dependences of ρc can be explained in the framework of the mechanism of current passage via metal shunts incorporated into semiconductor with allowance for electrons freezing out at liquid-helium temperatures. The ohmic character of contacts is ensured due to limitation of the electron current by diffusion supply in the presence of band bending at the semiconductor–metal interface near the shunt edge.
Sobre autores
A. Sachenko
V.E. Lashkaryov Institute of Semiconductor Physics
Autor responsável pela correspondência
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03680
A. Belyaev
V.E. Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03680
N. Boltovets
Orion Research and Production Enterprise
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03057
R. Konakova
V.E. Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03680
S. Vitusevich
V.E. Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03680
S. Novitskii
V.E. Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03680
V. Sheremet
V.E. Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03680
A. Pilipchuk
Institute of Physics
Email: sach@isp.kiev.ua
Ucrânia, Kyiv, 03028