Comparative Photoluminescent Analysis of Point Defects in SiO2 Induced by Implantation of Ar+ Ions and Neutron Irradiation
- Авторлар: Shcherbakov I.1, Chmel’ A.1
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Мекемелер:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Шығарылым: Том 45, № 3 (2019)
- Беттер: 208-210
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208235
- DOI: https://doi.org/10.1134/S1063785019030155
- ID: 208235
Дәйексөз келтіру
Аннотация
The introduction of Si+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).
Авторлар туралы
I. Shcherbakov
Ioffe Physical Technical Institute, Russian Academy of Sciences
Email: chmel@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Chmel’
Ioffe Physical Technical Institute, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: chmel@mail.ioffe.ru
Ресей, St. Petersburg, 194021