Black Silicon: a New Manufacturing Method and Optical Properties
- Авторлар: Nebol’sin V.1, Swaikat N.1, Vorob’ev A.1
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Мекемелер:
- Voronezh State Technical University
- Шығарылым: Том 44, № 12 (2018)
- Беттер: 1055-1058
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208052
- DOI: https://doi.org/10.1134/S1063785018120313
- ID: 208052
Дәйексөз келтіру
Аннотация
A new method for manufacturing nanostructured black silicon (b-Si) by growing cone-shaped (pointed) filamentous nanocrystals (nanowires, FNWs) on the surface of single-crystal Si-plates has been proposed. b-Si samples with reflectivity less than 0.1% have been obtained. It has been shown that the b-Si reflection coefficient depends on the sizes of the FNWs in the visible region of the spectrum: its minimum value (less than 0.1%) has been achieved at diameters at the base of the FNWs of 650–750 nm and a length of 1.5–2 μm.
Авторлар туралы
V. Nebol’sin
Voronezh State Technical University
Хат алмасуға жауапты Автор.
Email: vcmsao13@mail.ru
Ресей, Voronezh, 394026
N. Swaikat
Voronezh State Technical University
Email: vcmsao13@mail.ru
Ресей, Voronezh, 394026
A. Vorob’ev
Voronezh State Technical University
Email: vcmsao13@mail.ru
Ресей, Voronezh, 394026