An Antireflection Coating of a Germanium Subcell in GaInP/GaAs/Ge Solar Cells
- Авторлар: Mintairov S.1, Emel’yanov V.1, Kalyuzhnyi N.1, Andreev V.1
-
Мекемелер:
- Ioffe Physical Technical Institute
- Шығарылым: Том 44, № 11 (2018)
- Беттер: 1042-1044
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208047
- DOI: https://doi.org/10.1134/S1063785018110263
- ID: 208047
Дәйексөз келтіру
Аннотация
Spectral characteristics of the Ge subcell of triple-junction GaInP/GaAs/Ge solar cells have been simulated. It was shown that using a GaInP nucleation layer that creates a shallow diffusion p–n junction in Ge can raise the photogeneration current of the Ge subcell by ~4.5 mA/cm2 as compared with the value in the case of a GaAs nucleation layer. The optimal thickness of the GaInP layer (170–180 nm) makes it possible to additionally raise the photocurrent by ~1.5 mA/cm2. It was experimentally demonstrated that the photogenerated current of the Ge subcell of GaInP/GaAs/Ge solar cells increases by 3.9 mA/cm2 on replacing the GaAs nucleation layer with GaInP and there is an additional gain by 0.9 mA/cm2 on using the optimal thickness of the GaInP nucleation layer.
Авторлар туралы
S. Mintairov
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: mintairov@scell.ioffe.ru
Ресей, St. Petersburg
V. Emel’yanov
Ioffe Physical Technical Institute
Email: mintairov@scell.ioffe.ru
Ресей, St. Petersburg
N. Kalyuzhnyi
Ioffe Physical Technical Institute
Email: mintairov@scell.ioffe.ru
Ресей, St. Petersburg
V. Andreev
Ioffe Physical Technical Institute
Email: mintairov@scell.ioffe.ru
Ресей, St. Petersburg