Radiation Resistance of α-Si:H/Si Heterojunction Solar Cells with a Thin i-α-Si:H Inner Layer
- Авторлар: Kalinovskii V.1, Terukov E.1,2, Kontrosh E.1, Verbitskii V.1, Titov A.1,2
-
Мекемелер:
- Ioffe Physical Technical Institute
- Scientific Technical Center of Thin-Film Technology in Power Engineering, Ioffe Physical Technical Institute
- Шығарылым: Том 44, № 9 (2018)
- Беттер: 801-803
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207895
- DOI: https://doi.org/10.1134/S1063785018090067
- ID: 207895
Дәйексөз келтіру
Аннотация
We have studied the degradation of photoelectric characteristics of heterojunction solar cell samples based on α-Si:H/Si structures upon irradiation by electrons with an energy of 3.8 MeV and fluences of 1 × 1012–1 × 1014 cm–2. It is shown that the efficiency of the samples of heterojunction solar cell elements under the conditions of AM0 illumination (0.136 W/cm2) is reduced by 25% at a fluence of 2 × 1013 cm–2. This is more than an order of magnitude higher than the critical fluence value achieved previously when silicon solar cells with a p–n junction and an n-type base were irradiated by high-energy electrons.
Авторлар туралы
V. Kalinovskii
Ioffe Physical Technical Institute
Email: eug.terukov@mail.ioffe.ru
Ресей, St. Petersburg
E. Terukov
Ioffe Physical Technical Institute; Scientific Technical Center of Thin-Film Technology in Power Engineering, Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: eug.terukov@mail.ioffe.ru
Ресей, St. Petersburg; St. Petersburg
E. Kontrosh
Ioffe Physical Technical Institute
Email: eug.terukov@mail.ioffe.ru
Ресей, St. Petersburg
V. Verbitskii
Ioffe Physical Technical Institute
Email: eug.terukov@mail.ioffe.ru
Ресей, St. Petersburg
A. Titov
Ioffe Physical Technical Institute; Scientific Technical Center of Thin-Film Technology in Power Engineering, Ioffe Physical Technical Institute
Email: eug.terukov@mail.ioffe.ru
Ресей, St. Petersburg; St. Petersburg