Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate
- Авторлар: Bessolov V.1, Konenkova E.1, Orlova T.1, Rodin S.1, Shcheglov M.1, Kibalov D.2, Smirnov V.2
-
Мекемелер:
- Ioffe Physical Technical Institute
- Quantum Silicon Company
- Шығарылым: Том 44, № 6 (2018)
- Беттер: 525-527
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207729
- DOI: https://doi.org/10.1134/S1063785018060172
- ID: 207729
Дәйексөз келтіру
Аннотация
We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ωθ ~ 60 arcmin.
Авторлар туралы
V. Bessolov
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: bes.triat@mail.ioffe.ru
Ресей, St. Petersburg, 194021
E. Konenkova
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Ресей, St. Petersburg, 194021
T. Orlova
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Ресей, St. Petersburg, 194021
S. Rodin
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Shcheglov
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Ресей, St. Petersburg, 194021
D. Kibalov
Quantum Silicon Company
Email: bes.triat@mail.ioffe.ru
Ресей, Moscow, 115094
V. Smirnov
Quantum Silicon Company
Email: bes.triat@mail.ioffe.ru
Ресей, Moscow, 115094