Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate
- Authors: Bessolov V.N.1, Konenkova E.V.1, Orlova T.A.1, Rodin S.N.1, Shcheglov M.P.1, Kibalov D.S.2, Smirnov V.K.2
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Affiliations:
- Ioffe Physical Technical Institute
- Quantum Silicon Company
- Issue: Vol 44, No 6 (2018)
- Pages: 525-527
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207729
- DOI: https://doi.org/10.1134/S1063785018060172
- ID: 207729
Cite item
Abstract
We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown that, using such a nanostructured substrate for metalorganic hydride vapor-phase epitaxy, it is possible to obtain GaN (101̅1̇) epilayers deviating by an angle of about 62° from the polar direction and having an X-ray rocking curve with a minimum FWHM value of ωθ ~ 60 arcmin.
About the authors
V. N. Bessolov
Ioffe Physical Technical Institute
Author for correspondence.
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. V. Konenkova
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
T. A. Orlova
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. P. Shcheglov
Ioffe Physical Technical Institute
Email: bes.triat@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. S. Kibalov
Quantum Silicon Company
Email: bes.triat@mail.ioffe.ru
Russian Federation, Moscow, 115094
V. K. Smirnov
Quantum Silicon Company
Email: bes.triat@mail.ioffe.ru
Russian Federation, Moscow, 115094