The Effect of Constant Magnetic Fields on the Dynamics of Molten Zones in the Field of Structural Inhomogeneity of Silicon
- Авторлар: Skvortsov A.1, Pshonkin D.1, Koryachko M.1, Rybakova M.1
-
Мекемелер:
- Moscow Polytechnic University
- Шығарылым: Том 44, № 6 (2018)
- Беттер: 498-501
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207702
- DOI: https://doi.org/10.1134/S106378501806010X
- ID: 207702
Дәйексөз келтіру
Аннотация
The effect of constant magnetic fields on the formation and dynamics of molten Al–Si inclusions in silicon in the field of structural inhomogeneity of a crystal (the dislocation density-gradient field) is considered. The migration rates of liquid inclusions in crystals have been found experimentally under conditions of prevailing melting–crystallization mechanisms at the phase interfaces between the melt and matrix before and after magnetic exposure. It has been found that a preliminarily exposure of dislocation silicon samples in a constant magnetic field leads to an increase in the displacement speed of molten zones in the density-gradient field.
Авторлар туралы
A. Skvortsov
Moscow Polytechnic University
Хат алмасуға жауапты Автор.
Email: SkvortsovAA2009@yandex.ru
Ресей, Moscow, 107023
D. Pshonkin
Moscow Polytechnic University
Email: SkvortsovAA2009@yandex.ru
Ресей, Moscow, 107023
M. Koryachko
Moscow Polytechnic University
Email: SkvortsovAA2009@yandex.ru
Ресей, Moscow, 107023
M. Rybakova
Moscow Polytechnic University
Email: SkvortsovAA2009@yandex.ru
Ресей, Moscow, 107023