Local Anodic Oxidation of Graphene Layers on SiC
- Авторлар: Alekseev P.1, Borodin B.1, Dunaevskii M.1, Smirnov A.2, Davydov V.1, Lebedev S.1, Lebedev A.1
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Мекемелер:
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies
- Шығарылым: Том 44, № 5 (2018)
- Беттер: 381-383
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207634
- DOI: https://doi.org/10.1134/S1063785018050024
- ID: 207634
Дәйексөз келтіру
Аннотация
A method of local anodic oxidation has been used to obtain graphene-oxide regions on SiC. The change of the surface properties was confirmed by atomic-force microscopy and Raman spectroscopy. Experimental data were obtained on the conductivity, potential, and topography of the oxidized regions. It was shown that the oxidation leads to a rise in the surface potential. A relationship was found between oxidation parameters, such as the scanning velocity and the probe voltage. The method of local anodic oxidation was used to obtain by lithography an ~20-nm-wide nanoribbon and an ~10-nm-wide nanoconstriction.
Авторлар туралы
P. Alekseev
Ioffe Physical Technical Institute
Хат алмасуға жауапты Автор.
Email: npoxep@gmail.com
Ресей, St. Petersburg, 194021
B. Borodin
Ioffe Physical Technical Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg, 194021
M. Dunaevskii
Ioffe Physical Technical Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg, 194021
A. Smirnov
St. Petersburg National Research University of Information Technologies
Email: npoxep@gmail.com
Ресей, St. Petersburg, 197101
V. Davydov
Ioffe Physical Technical Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg, 194021
S. Lebedev
Ioffe Physical Technical Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg, 194021
A. Lebedev
Ioffe Physical Technical Institute
Email: npoxep@gmail.com
Ресей, St. Petersburg, 194021