The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals
- Авторлар: Yafarov R.1
-
Мекемелер:
- Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)
- Шығарылым: Том 43, № 12 (2017)
- Беттер: 1132-1135
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206981
- DOI: https://doi.org/10.1134/S1063785017120288
- ID: 206981
Дәйексөз келтіру
Аннотация
Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.
Авторлар туралы
R. Yafarov
Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)
Хат алмасуға жауапты Автор.
Email: pirpc@yandex.ru
Ресей, Saratov, 410019