The Influence of the Surface Neutralization of Active Impurities on the Field-Electron Emission Properties of p-Type Silicon Crystals
- Authors: Yafarov R.K.1
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Affiliations:
- Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)
- Issue: Vol 43, No 12 (2017)
- Pages: 1132-1135
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/206981
- DOI: https://doi.org/10.1134/S1063785017120288
- ID: 206981
Cite item
Abstract
Correlation dependences between variations of the structural-phase composition, morphology characteristics, and field-electron-emission (FEE) properties of surface-structured p-type silicon singlecrystalline (100)-oriented wafers have been studied during their stepwise high-dose carbon-ion-beam irradiation. It is established that the stepwise implantation of carbon decreases the FEE threshold and favors an increase in the maximum FEE-current density by more than two orders of magnitude. Physicochemical mechanisms involved in this modification of the properties of near-surface layers of silicon under carbon-ion implantation are considered.
About the authors
R. K. Yafarov
Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch)
Author for correspondence.
Email: pirpc@yandex.ru
Russian Federation, Saratov, 410019