A new type of gas sensor based on the thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

I. A. Pronin; N. D. Yakushova; D. Ts. Dimitrov; L. K. Krasteva; K. I. Papazova; A. A. Karmanov; I. A. Averin; A. Ts. Georgieva; V. A. Moshnikov; E. I. Terukov

doi:10.1134/S1063785017090255

A new type of gas sensor based on the thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

Authors: Pronin I.A.¹^,2, Yakushova N.D.¹, Dimitrov D.T.³, Krasteva L.K.³, Papazova K.I.³, Karmanov A.A.¹, Averin I.A.¹, Georgieva A.T.⁴, Moshnikov V.A.¹^,2, Terukov E.I.⁵
Affiliations:
1. Penza State University
2. State Electrotechnical University (LETI)
3. Sv. Kliment Ohridski University of Sofia
4. University of Florida
5. Ioffe Physical Technical Institute
Issue: Vol 43, No 9 (2017)
Pages: 825-827
Section: Article
URL: https://journals.rcsi.science/1063-7850/article/view/205973
DOI: https://doi.org/10.1134/S1063785017090255
ID: 205973

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Abstract

We propose a new type of potentiometric gas sensor operating on the basis of the thermovoltaic effect in uniformly heated (without temperature gradients) ZnO/ZnO–Fe sandwich structures obtained by the sol–gel method. It is established that a significant contribution to the gas responsivity of sensors is related to the thickness of the upper doped layer of the structure.