An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

O. S. Talarico; V. V. Tregulov; V. G. Litvinov; A. V. Ermachikhin

doi:10.1134/S1063785016110213

An investigation of current-flow mechanisms in thin rubrene wafers prepared by the vapor transport method

Авторы: Talarico O.S.¹^,2, Tregulov V.V.³, Litvinov V.G.⁴, Ermachikhin A.V.⁴
Учреждения:
1. Lebedev Physical Institute
2. National Research Nuclear University “MEPhI,”
3. Esenin Ryazan State University
4. Ryazan State Radio Engineering University
Выпуск: Том 42, № 11 (2016)
Страницы: 1107-1109
Раздел: Article
URL: https://journals.rcsi.science/1063-7850/article/view/201943
DOI: https://doi.org/10.1134/S1063785016110213
ID: 201943

Цитировать

Полный текст

Открытый доступ
Доступ закрыт

Доступ предоставлен
Доступ закрыт

Только для подписчиков

Аннотация
Об авторах
Список литературы
Дополнительные файлы
Статистика

Аннотация

Optical transmission spectrum and temperature dependence of the current–voltage characteristics of a plane-parallel rubrene wafer prepared by the vapor transport method have been investigated. The band gap is determined from the optical transmission spectrum. It is established that the current–voltage characteristics can be explained within the framework of the model of space-charge-limited currents. The current-flow processes are significantly affected by traps.