Terahertz Emission from a Monolayer Tungsten Diselenide Surface

Аннотация

Parameters of terahertz (THz) emission in two-dimensional (2D) tungsten diselenide (WSe₂) film grown by chemical vapor deposition from the gas phase have been studied for the first time. The main mechanism of THz radiation generation in this system is established. Dependence of the THz signal amplitude on azimuthal angle in a 2D WSe₂ film has been studied. The distribution of the electric field of laser pumping in the WSe₂/SiO₂/Si structure has been calculated as dependent on the thickness of silicon dioxide layer. The choice of optimum structure geometry for effective generation of THz radiation by a WSe₂ monolayer is theoretically substantiated.