InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

N. A. Maleev; A. P. Vasil’ev; A. G. Kuzmenkov; M. A. Bobrov; M. M. Kulagina; S. I. Troshkov; S. N. Maleev; V. A. Belyakov; E. V. Petryakova; Yu. P. Kudryashova; E. L. Fefelova; I. V. Makartsev; S. A. Blokhin; F. A. Ahmedov; A. V. Egorov; A. G. Fefelov; V. M. Ustinov

doi:10.1134/S1063785019110075

InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

Authors: Maleev N.A.¹^,2, Vasil’ev A.P.³, Kuzmenkov A.G.³, Bobrov M.A.¹, Kulagina M.M.¹, Troshkov S.I.¹, Maleev S.N.¹, Belyakov V.A.⁴, Petryakova E.V.⁴, Kudryashova Y.P.⁴, Fefelova E.L.⁴, Makartsev I.V.⁴, Blokhin S.A.¹, Ahmedov F.A.⁵, Egorov A.V.⁵, Fefelov A.G.⁴, Ustinov V.M.¹^,2^,3
Affiliations:
1. Ioffe Institute, Russian Academy of Sciences
2. St. Petersburg State Electrotechnical University LETI
3. Submicron Heterostructures for Microelectronics Research Engineering Center, Russian Academy of Sciences
4. JSC “NPP Salyut”
5. NPO TECHNOMASH
Issue: Vol 45, No 11 (2019)
Pages: 1092-1096
Section: Article
URL: https://journals.rcsi.science/1063-7850/article/view/208473
DOI: https://doi.org/10.1134/S1063785019110075
ID: 208473

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Abstract

A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T‑shaped gate 120 nm in length consist of four fingers, each 30 μm in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.

Keywords

high-electron-mobility transistor, InP, breakdown voltage, millimeter wave amplifiers.

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InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

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Abstract

Keywords

About the authors

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