Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction
- Authors: Bakhadyrkhanov M.K.1, Isamov S.B.1, Kenzhaev Z.T.2, Koveshnikov S.V.1
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Affiliations:
- Tashkent State Technical University
- Karakalpak State University
- Issue: Vol 45, No 10 (2019)
- Pages: 959-962
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208438
- DOI: https://doi.org/10.1134/S1063785019100031
- ID: 208438
Cite item
Abstract
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.
Keywords
About the authors
M. K. Bakhadyrkhanov
Tashkent State Technical University
Author for correspondence.
Email: bahazeb@yandex.com
Uzbekistan, Tashkent, 100095
S. B. Isamov
Tashkent State Technical University
Email: bahazeb@yandex.com
Uzbekistan, Tashkent, 100095
Z. T. Kenzhaev
Karakalpak State University
Email: bahazeb@yandex.com
Uzbekistan, Nukus, 230112
S. V. Koveshnikov
Tashkent State Technical University
Email: bahazeb@yandex.com
Uzbekistan, Tashkent, 100095