Growing III–V Semiconductor Heterostructures on SiC/Si Substrates
- Authors: Sharofidinov S.S.1,2, Kukushkin S.A.2,3, Red’kov A.V.2, Grashchenko A.S.4, Osipov A.V.2
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Affiliations:
- Ioffe Physical Technical Institute, Russian Academy of Sciences
- Institute for Problems of Mechanical Engineering, Russian Academy of Sciences
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Issue: Vol 45, No 7 (2019)
- Pages: 711-713
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208373
- DOI: https://doi.org/10.1134/S1063785019070277
- ID: 208373
Cite item
Abstract
A three-layer heterostructure consisting of AlN (∼0.72 μm thick), AlGaN (∼ 1.82 μm thick), and GaN (∼2.2 μm thick) layers has been grown by hydride–chloride vapor phase epitaxy (HVPE) method on a Si substrate with a SiC buffer nanolayer. The heterostructure was studied using scanning electron microscopy, energy-dispersive X-ray spectroscopy, and other techniques. The results showed that SiC/Si substrates can be used for growing films of III–V semiconductor compounds by HVPE at a high rate (~66 μm/h) free of cracks and with small residual elastic stresses (~160 MPa).
About the authors
Sh. Sh. Sharofidinov
Ioffe Physical Technical Institute, Russian Academy of Sciences; Institute for Problems of Mechanical Engineering, Russian Academy of Sciences
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199178
S. A. Kukushkin
Institute for Problems of Mechanical Engineering, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Author for correspondence.
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 199178; St. Petersburg, 195251
A. V. Red’kov
Institute for Problems of Mechanical Engineering, Russian Academy of Sciences
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 199178
A. S. Grashchenko
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 197101
A. V. Osipov
Institute for Problems of Mechanical Engineering, Russian Academy of Sciences
Email: sergey.a.kukushkin@gmail.com
Russian Federation, St. Petersburg, 199178