An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures

P. S. Gavrina; O. S. Soboleva; A. A. Podoskin; D. N. Romanovich; V. S. Golovin; S. O. Slipchenko; N. A. Pikhtin; T. A. Bagaev; M. A. Ladugin; A. A. Marmalyuk; V. A. Simakov

doi:10.1134/S1063785019040254

An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures

Authors: Gavrina P.S.¹, Soboleva O.S.¹, Podoskin A.A.¹, Romanovich D.N.¹, Golovin V.S.¹, Slipchenko S.O.¹, Pikhtin N.A.¹, Bagaev T.A.², Ladugin M.A.², Marmalyuk A.A.², Simakov V.A.²
Affiliations:
1. Ioffe Physical Technical Institute, Russian Academy of Sciences
2. JSC F.M. Stelmakh POLYUS Research Institute
Issue: Vol 45, No 4 (2019)
Pages: 374-378
Section: Article
URL: https://journals.rcsi.science/1063-7850/article/view/208281
DOI: https://doi.org/10.1134/S1063785019040254
ID: 208281

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

A method of determining the spatiotemporal dynamics of current in semiconductor heterostructures is proposed that is based on the modulation of external probing radiation transmitted through the crystal. The proposed method has been verified on semiconductor laser thyristors based on AlGaAs/InGaAs/GaAs heterostructures. The results of this experiment qualitatively coincide with the results of previous measurements of the device on-state dynamics.