Solid-Phase Epitaxy of BiFeO3 Films with Magnetoelectric Properties on Sapphire
- Authors: Muslimov A.E.1, Butashin A.V.1, Kanevskii V.M.1
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,” Russian Academy of Sciences
- Issue: Vol 45, No 2 (2019)
- Pages: 96-99
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208203
- DOI: https://doi.org/10.1134/S1063785019020135
- ID: 208203
Cite item
Abstract
The ferroelectric domain structure has been investigated in bismuth-ferrite rhombohedral phase films prepared on the rhombohedral plane of sapphire by solid-phase epitaxy. The piezoelectric modulus has been estimated to be d33 ~ 2 pm/V. In films of the Bi25FeO39–BiFeO3 and Bi2Fe4O9–BiFeO3 systems on sapphire, the magnetoelectric-switching effect has been observed in bismuth ferrite crystallites without deposition of exchange-coupled layers. The values of the magnetic moment in bismuth ferrite microcrystallites have been estimated.
About the authors
A. E. Muslimov
Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Author for correspondence.
Email: amuslimov@mail.ru
Russian Federation, Moscow, 119333
A. V. Butashin
Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: amuslimov@mail.ru
Russian Federation, Moscow, 119333
V. M. Kanevskii
Shubnikov Institute of Crystallography, Federal Scientific Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: amuslimov@mail.ru
Russian Federation, Moscow, 119333