Email this article Electron Emission Properties of Submicron Semiconductor Particles
- Authors: Gavrikov M.V.1, Zhukov N.D.1, Mosiyash D.S.2, Khazanov A.A.1
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Affiliations:
- Saratov State University
- OOO Ref-Svet
- Issue: Vol 44, No 12 (2018)
- Pages: 1230-1233
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208172
- DOI: https://doi.org/10.1134/S1063785019010061
- ID: 208172
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Abstract
The electron emission properties of submicron Si, GaAs, InSb, and InAs semiconductor particles and their multigrain structures have been investigated. The effect of the properties of nanoparticles on the field and secondary emissions has been established. A scanning electron microscopy-based method for measuring the secondary emission coefficient of semiconductors has been proposed. The effect of photoexcitation of the multigrain structure of submicron semiconductor particles on their secondary emission properties has been investigated by the vacuum triode method.
About the authors
M. V. Gavrikov
Saratov State University
Author for correspondence.
Email: maks.gavrikov.96@gmail.com
Russian Federation, Saratov, 410012
N. D. Zhukov
Saratov State University
Email: maks.gavrikov.96@gmail.com
Russian Federation, Saratov, 410012
D. S. Mosiyash
OOO Ref-Svet
Email: maks.gavrikov.96@gmail.com
Russian Federation, Saratov, 410032
A. A. Khazanov
Saratov State University
Email: maks.gavrikov.96@gmail.com
Russian Federation, Saratov, 410012
