A Study of Ohmic Contacts of Power Photovoltaic Converters
- 作者: Malevskaya A.V.1, Khvostikov V.P.1, Soldatenkov F.Y.1, Khvostikova O.A.1, Vlasov A.S.1, Andreev V.M.1
-
隶属关系:
- Ioffe Institute
- 期: 卷 44, 编号 12 (2018)
- 页面: 1198-1200
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208163
- DOI: https://doi.org/10.1134/S1063785019010140
- ID: 208163
如何引用文章
详细
Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.
作者简介
A. Malevskaya
Ioffe Institute
编辑信件的主要联系方式.
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Khvostikov
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
F. Soldatenkov
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
O. Khvostikova
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Andreev
Ioffe Institute
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
补充文件
