A Study of Ohmic Contacts of Power Photovoltaic Converters

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详细

Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.

作者简介

A. Malevskaya

Ioffe Institute

编辑信件的主要联系方式.
Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Khvostikov

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

F. Soldatenkov

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

O. Khvostikova

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Vlasov

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

V. Andreev

Ioffe Institute

Email: amalevskaya@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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