Email this article Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses
- Authors: Filatov D.O.1, Karzanov V.V.1, Antonov I.N.1, Gorshkov O.N.1
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 44, No 12 (2018)
- Pages: 1160-1162
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208152
- DOI: https://doi.org/10.1134/S1063785018120416
- ID: 208152
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Abstract
It has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO2(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.
About the authors
D. O. Filatov
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: dmitry_filatov@inbox.ru
Russian Federation, Nizhny Novgorod, 603950
V. V. Karzanov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Russian Federation, Nizhny Novgorod, 603950
I. N. Antonov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Russian Federation, Nizhny Novgorod, 603950
O. N. Gorshkov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Russian Federation, Nizhny Novgorod, 603950
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