A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy
- Authors: Vasil’ev V.I.1, Gagis G.S.1, Levin R.V.1, Marichev A.E.1, Pushnyi B.V.1, Scheglov M.P.1, Kuchinskii V.I.1,2, Ber B.Y.1, Kazantsev D.Y.1, Gorokhov A.N.1, Popova T.B.1
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Affiliations:
- Ioffe Physical Technical Institute
- St. Petersburg State Electrotechnical University LETI
- Issue: Vol 44, No 12 (2018)
- Pages: 1127-1129
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/208107
- DOI: https://doi.org/10.1134/S1063785018120593
- ID: 208107
Cite item
Abstract
Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal-organic vapor-phase epitaxy under lowered pressure, although the composition of the gas mixture, temperature, and pressure were maintained invariable in the course of the growth process. For different gas mixture compositions, the value of Δy and the manner of its variation were different. An analysis of the data obtained demonstrated that Δy is due to the deformations that appear in a growing layer because of the lattice mismatch with the substrate.
About the authors
V. I. Vasil’ev
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
G. S. Gagis
Ioffe Physical Technical Institute
Author for correspondence.
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
R. V. Levin
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
A. E. Marichev
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
B. V. Pushnyi
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
M. P. Scheglov
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
V. I. Kuchinskii
Ioffe Physical Technical Institute; St. Petersburg State Electrotechnical University LETI
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
B. Ya. Ber
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
D. Yu. Kazantsev
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
A. N. Gorokhov
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021
T. B. Popova
Ioffe Physical Technical Institute
Email: galina.gagis@gmail.com
Russian Federation, St. Petersburg, 194021