An in situ Study of the Kinetics of a Solid-Phase Reaction Activated by the Energy of Elastic Stresses Arisen upon the Formation of the Cu/As2Se3 Nanosized Film Structure

Abstract

For the first time, the kinetics of a solid-phase chemical reaction activated by the energy of elastic stresses generated upon the formation of the Cu/As₂Se₃ nanosized film structure is investigated in situ. It is shown that the time at which a solid-phase chemical reaction starts, as well as the voltage of the Cu/As₂Se₃ heterolayer, significantly depends on the thickness of the As₂Se₃ film. At a critical thickness of the As₂Se₃ film, which is equal to 110 nm, a threshold value of the energy of elastic stresses is achieved. Relaxation of this energy over new defects (micropores and microcracks) generated in the film system leads to the activation of a solid-phase chemical reaction and an increase in its rate. A mechanism of the operation of a positive feedback between the chemical reaction in a solid phase and elastic stresses is proposed.