The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

Abstract

Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N⁺ ions at doses of 5 × 10¹⁴–5 × 10¹⁶ cm^–2. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.