The Mechanism of Generation of Singlet Oxygen in the Presence of Excited Nanoporous Silicon
- Authors: Samosvat D.M.1, Chikalova-Luzina O.P.1, Khromov V.S.1, Zegrya A.G.1, Zegrya G.G.1
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Affiliations:
- Ioffe Physical Technical Institute
- Issue: Vol 44, No 6 (2018)
- Pages: 479-482
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207693
- DOI: https://doi.org/10.1134/S1063785018060093
- ID: 207693
Cite item
Abstract
A theoretical analysis of the mechanism of generation of singlet oxygen in the presence of photoexcited nanoporous silicon is presented. It is demonstrated that the mechanism of generation of singlet oxygen is based on nonradiative energy transfer from nanoporous silicon to an oxygen molecule by the exchange mechanism. An analytical expression of the probability of energy transfer from nanoporous silicon to an oxygen molecule is obtained, and a numerical estimate of this process is given. The numerical estimation is of the order of 103–104 s–1, a value that agrees rather well with the experiment.
About the authors
D. M. Samosvat
Ioffe Physical Technical Institute
Author for correspondence.
Email: samosvat@yandex.ru
Russian Federation, St. Petersburg, 194021
O. P. Chikalova-Luzina
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Russian Federation, St. Petersburg, 194021
V. S. Khromov
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Russian Federation, St. Petersburg, 194021
A. G. Zegrya
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Russian Federation, St. Petersburg, 194021
G. G. Zegrya
Ioffe Physical Technical Institute
Email: samosvat@yandex.ru
Russian Federation, St. Petersburg, 194021