Electron traps in Gd 3 Ga 3 Al 2 O 12 :Ce garnets doped with rare-earth ions

V. M. Khanin; P. A. Rodnyi; H. Wieczorek; C. R. Ronda

doi:10.1134/S1063785017050042

Electron traps in Gd₃Ga₃Al₂O₁₂:Ce garnets doped with rare-earth ions

Authors: Khanin V.M.¹^,2, Rodnyi P.A.¹, Wieczorek H.², Ronda C.R.²
Affiliations:
1. Peter the Great St. Petersburg Polytechnic University
2. Philips Research Eindhoven
Issue: Vol 43, No 5 (2017)
Pages: 439-442
Section: Article
URL: https://journals.rcsi.science/1063-7850/article/view/204524
DOI: https://doi.org/10.1134/S1063785017050042
ID: 204524

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Abstract
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Abstract

The curves of thermally stimulated luminescence of Gd₃Ga₃Al₂O₁₂:Ce³⁺ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80–550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd₃Ga₃Al₂O₁₂ is presented.

About the authors

V. M. Khanin

Peter the Great St. Petersburg Polytechnic University; Philips Research Eindhoven

Author for correspondence.
Email: khanin.vasilii@mail.ru
Russian Federation, St. Petersburg, 195251; High Tech Campus 34, Eindhoven, 5656 AE

P. A. Rodnyi

Peter the Great St. Petersburg Polytechnic University

Email: khanin.vasilii@mail.ru
Russian Federation, St. Petersburg, 195251

H. Wieczorek

Philips Research Eindhoven

Email: khanin.vasilii@mail.ru
Netherlands, High Tech Campus 34, Eindhoven, 5656 AE

C. R. Ronda