Terahertz emission at impurity electrical breakdown in Si(Li)


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Abstract

Terahertz electroluminescence caused by impurity-induced breakdown in lithium-doped silicon crystals is studied. The spectrum of the terahertz emission exhibits lines corresponding to intracenter electronic transitions between excited states of the impurity and sublevels of the ground state of the lithium donor. The spectrum also shows a background signal, which, apparently, is a manifestation of the effects due to heating at electric excitation.

About the authors

A. V. Andrianov

Ioffe Physical Technical Institute

Author for correspondence.
Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. O. Zakhar’in

Ioffe Physical Technical Institute

Email: alex.andrianov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

R. Kh. Zhukavin

Institute for Physics of Microstructures

Email: alex.andrianov@mail.ioffe.ru
Russian Federation, Afonino, Nizhny Novgorod oblast’, 603087

V. N. Shastin

Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod

Email: alex.andrianov@mail.ioffe.ru
Russian Federation, Afonino, Nizhny Novgorod oblast’, 603087; Nizhny Novgorod, 603950

D. V. Shengurov

Institute for Physics of Microstructures

Email: alex.andrianov@mail.ioffe.ru
Russian Federation, Afonino, Nizhny Novgorod oblast’, 603087

N. V. Abrosimov

Leibniz Institute for Crystal Growth

Email: alex.andrianov@mail.ioffe.ru
Germany, Berlin, 12489

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