The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
- Authors: Emtsev V.V.1, Zavarin E.E.1, Oganesyan G.A.1, Petrov V.N.1, Sakharov A.V.1, Shmidt N.M.1, V’yuginov V.N.2, Zybin A.A.2, Parnes Y.M.2, Vidyakin S.I.3, Gudkov A.G.3, Chernyakov A.E.4
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Affiliations:
- Ioffe Physical Technical Institute
- Svetlana-Elektronpribor Company
- Bauman Moscow State Technical University
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Issue: Vol 42, No 7 (2016)
- Pages: 701-703
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/199961
- DOI: https://doi.org/10.1134/S1063785016070075
- ID: 199961
Cite item
Abstract
The first experimental results demonstrating that the carrier mobility in the AlGaN/GaN 2D channel of transistor structures (AlGaN/GaN-HEMT) is correlated with the manner in which the nanomaterial is organized and also with the operation reliability of transistor parameters are presented. It is shown that improving the nature of organization of the nanomaterials in AlGaN/GaN-HEMT structures, evaluated by the multifractal parameter characterizing the extent to which a nanomaterial is disordered (local symmetry breaking) is accompanied by a significant, several-fold increase in the electron mobility in the 2D channel and in the reliability of parameters of transistors fabricated from these structures.
About the authors
V. V. Emtsev
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. E. Zavarin
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. A. Oganesyan
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Petrov
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Physical Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. M. Shmidt
Ioffe Physical Technical Institute
Author for correspondence.
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. V’yuginov
Svetlana-Elektronpribor Company
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Zybin
Svetlana-Elektronpribor Company
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Ya. M. Parnes
Svetlana-Elektronpribor Company
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. I. Vidyakin
Bauman Moscow State Technical University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, Moscow, 105005
A. G. Gudkov
Bauman Moscow State Technical University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, Moscow, 105005
A. E. Chernyakov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021