The atomic and electronic structure of oxygen polyvacancies in anatase


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Abstract

We investigate oxygen-deficient anatase using quantum-chemical simulation within the density functional theory and X-ray photoelectron spectroscopy. It is demonstrated that etching of anatase with argon ions with an energy of 2.4 keV results in the formation of oxygen vacancies and polyvacancies at a concentration of approximately 1020 cm–3 in the crystal. It was found that the most energetically favorable spatial configuration of an oxygen polyvacancy is a three-dimensional chain in crystallographic direction [100] or [010]. The ability of oxygen polyvacancy in the form of a chain to act as a conductive filament and to participate in the resistive switching is discussed.

About the authors

T. V. Perevalov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Author for correspondence.
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

D. R. Islamov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090

A. A. Saraev

Novosibirsk State University; Boreskov Institute of Catalysis, Siberian Branch

Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090


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