Enviar artigo por via de e-mail InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
- Autores: Levin R.V.1,2, Nevedomskii V.N.1, Pushnyi B.V.1,2, Bert N.A.1, Mizerov M.N.2
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Afiliações:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics, Research, and Engineering Center
- Edição: Volume 42, Nº 1 (2016)
- Páginas: 96-98
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196947
- DOI: https://doi.org/10.1134/S1063785016010284
- ID: 196947
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Resumo
The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.
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Sobre autores
R. Levin
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
V. Nevedomskii
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
B. Pushnyi
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Autor responsável pela correspondência
Email: pushnyi@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
N. Bert
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Rússia, St. Petersburg, 194021
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