Email this article InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
- Authors: Levin R.V.1,2, Nevedomskii V.N.1, Pushnyi B.V.1,2, Bert N.A.1, Mizerov M.N.2
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Affiliations:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics, Research, and Engineering Center
- Issue: Vol 42, No 1 (2016)
- Pages: 96-98
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/196947
- DOI: https://doi.org/10.1134/S1063785016010284
- ID: 196947
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Abstract
The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.
About the authors
R. V. Levin
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
V. N. Nevedomskii
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
B. V. Pushnyi
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Author for correspondence.
Email: pushnyi@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021
N. A. Bert
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. N. Mizerov
Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Russian Federation, St. Petersburg, 194021
