Structure and Polarization Relaxation of Ba0.5Sr0.5Nb2O6/(001)Si Films
- 作者: Pavlenko A.1,2, Stryukov D.1, Mukhortov V.1, Biryukov S.1
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隶属关系:
- Southern Scientific Center
- Southern Federal University
- 期: 卷 63, 编号 3 (2018)
- 页面: 407-410
- 栏目: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/200988
- DOI: https://doi.org/10.1134/S1063784218030179
- ID: 200988
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详细
The structure and dielectric characteristics of strontium barium niobate thin films deposited on single-crystalline silicon substrates without buffer layers are studied. It is found that the c axis in these heterostructures runs largely normally to the substrate surface and the a and b axes are randomly oriented in the plane of the substrate. The polarization relaxation in such heterostructures is investigated. It is shown that the film–substrate interface in the heterostructures grown by rf cathode sputtering may contain a low amount of long-lived charged defects.
作者简介
A. Pavlenko
Southern Scientific Center; Southern Federal University
编辑信件的主要联系方式.
Email: Antvpr@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Rostov-on-Don, 344090
D. Stryukov
Southern Scientific Center
Email: Antvpr@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
V. Mukhortov
Southern Scientific Center
Email: Antvpr@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
S. Biryukov
Southern Scientific Center
Email: Antvpr@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006