Structure and Polarization Relaxation of Ba0.5Sr0.5Nb2O6/(001)Si Films
- Авторы: Pavlenko A.1,2, Stryukov D.1, Mukhortov V.1, Biryukov S.1
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Учреждения:
- Southern Scientific Center
- Southern Federal University
- Выпуск: Том 63, № 3 (2018)
- Страницы: 407-410
- Раздел: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/200988
- DOI: https://doi.org/10.1134/S1063784218030179
- ID: 200988
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Аннотация
The structure and dielectric characteristics of strontium barium niobate thin films deposited on single-crystalline silicon substrates without buffer layers are studied. It is found that the c axis in these heterostructures runs largely normally to the substrate surface and the a and b axes are randomly oriented in the plane of the substrate. The polarization relaxation in such heterostructures is investigated. It is shown that the film–substrate interface in the heterostructures grown by rf cathode sputtering may contain a low amount of long-lived charged defects.
Об авторах
A. Pavlenko
Southern Scientific Center; Southern Federal University
Автор, ответственный за переписку.
Email: Antvpr@mail.ru
Россия, Rostov-on-Don, 344006; Rostov-on-Don, 344090
D. Stryukov
Southern Scientific Center
Email: Antvpr@mail.ru
Россия, Rostov-on-Don, 344006
V. Mukhortov
Southern Scientific Center
Email: Antvpr@mail.ru
Россия, Rostov-on-Don, 344006
S. Biryukov
Southern Scientific Center
Email: Antvpr@mail.ru
Россия, Rostov-on-Don, 344006