Silicon-based shortwave differential photodetector
- Авторы: Gavrushko V.1, Ionov A.1, Kadriev O.1, Lastkin V.1
-
Учреждения:
- Yaroslav-the-Wise Novgorod State University
- Выпуск: Том 62, № 2 (2017)
- Страницы: 338-340
- Раздел: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/199010
- DOI: https://doi.org/10.1134/S1063784217020104
- ID: 199010
Цитировать
Аннотация
The silicon-based photodetector that contains two n+–p photodiode with equal areas has been described. One of the photodiodes had a wide spectral characteristic with high sensitivity in the UV range. The sensitivity of the second photodiode was decreased in the shortwave range via the formation of additional recombination centers in the near-surface region using the implantation of As ions. The study of the spectral sensitivity of the differential signal obtained by photocurrent subtraction has revealed a profound shortwave spectral characteristic. The boundaries of spectral range at λ0.5 were in the limits of 0.27–0.44 μm. The maximum sensitivity corresponded to λmax = 0.36 μm. The sensitivity of the differential channel at this wavelength reached 83% of that of the wide-range channel.
Об авторах
V. Gavrushko
Yaroslav-the-Wise Novgorod State University
Автор, ответственный за переписку.
Email: Valery.Gavrushko@novsu.ru
Россия, Velikiy Novgorod, 173003
A. Ionov
Yaroslav-the-Wise Novgorod State University
Email: Valery.Gavrushko@novsu.ru
Россия, Velikiy Novgorod, 173003
O. Kadriev
Yaroslav-the-Wise Novgorod State University
Email: Valery.Gavrushko@novsu.ru
Россия, Velikiy Novgorod, 173003
V. Lastkin
Yaroslav-the-Wise Novgorod State University
Email: Valery.Gavrushko@novsu.ru
Россия, Velikiy Novgorod, 173003