Numerical Analysis of Electron Runaway in the Presence of Enhanced Field in the Vicinity of a Microtip
- Авторлар: Lisenkov V.1,2, Ivanov S.1, Mamontov Y.2, Tikhonov I.2
-
Мекемелер:
- Institute of Electrophysics, Ural Branch, Russian Academy of Sciences
- Ural Federal University
- Шығарылым: Том 63, № 12 (2018)
- Беттер: 1872-1875
- Бөлім: Physical Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/202567
- DOI: https://doi.org/10.1134/S1063784218120095
- ID: 202567
Дәйексөз келтіру
Аннотация
Transition of field-emission electrons to the runaway regime in the region of enhanced electric field determined by the configuration of a microtip on a cathode is studied at several pressures of gas medium. The problem is solved using simulation of electron motion in the presence of nonuniform electric field with the aid of the Monte Carlo procedure in the 2D configuration. Nitrogen is used as a working gas. Passage through a relatively small region of the enhanced field in the vicinity of the microtip may substantially facilitate electron escape to the runaway regime, especially, at pressures of greater than 10 atm. In our opinion, the resulting runaway electrons may provide preionization of gas medium and formation of the initial stage of a 3D discharge.
Авторлар туралы
V. Lisenkov
Institute of Electrophysics, Ural Branch, Russian Academy of Sciences; Ural Federal University
Хат алмасуға жауапты Автор.
Email: lisenkov@iep.uran.ru
Ресей, Yekaterinburg, 620216; Yekaterinburg, 620002
S. Ivanov
Institute of Electrophysics, Ural Branch, Russian Academy of Sciences
Email: lisenkov@iep.uran.ru
Ресей, Yekaterinburg, 620216
Yu. Mamontov
Ural Federal University
Email: lisenkov@iep.uran.ru
Ресей, Yekaterinburg, 620002
I. Tikhonov
Ural Federal University
Email: lisenkov@iep.uran.ru
Ресей, Yekaterinburg, 620002