Fabrication of graphene and graphite films on the Ni(111) surface
- Авторлар: Rut’kov E.1, Afanas’eva E.1, Petrov V.1, Gall N.1,2
-
Мекемелер:
- Ioffe Physicotechnical Institute
- Institute for Analytical Instrumentation
- Шығарылым: Том 61, № 11 (2016)
- Беттер: 1724-1728
- Бөлім: Physical Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/198500
- DOI: https://doi.org/10.1134/S1063784216110219
- ID: 198500
Дәйексөз келтіру
Аннотация
The growth of graphene and graphite films on nickel surface under conditions for ultrahigh-vacuum carburization and subsequent annealing is studied at film thicknesses ranging from a single layer to ≈1000 layers. The cooling of nickel carburized at a temperature of 900–1500 K leads to the growth of graphene and thin graphite films the thickness of which depends on the carburization temperature and the growth temperature of the films. Dissolution of nickel with graphite film in diluted sulfuric acid makes it possible to separate the film from the sample. The graphite film thickness amounts to ˜0.4 µm at carburization and growth temperatures of 1500 and 1100 K, respectively.
Авторлар туралы
E. Rut’kov
Ioffe Physicotechnical Institute
Хат алмасуға жауапты Автор.
Email: rutkov@ms.ioffe.rssi.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
E. Afanas’eva
Ioffe Physicotechnical Institute
Email: rutkov@ms.ioffe.rssi.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
V. Petrov
Ioffe Physicotechnical Institute
Email: rutkov@ms.ioffe.rssi.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021
N. Gall
Ioffe Physicotechnical Institute; Institute for Analytical Instrumentation
Email: rutkov@ms.ioffe.rssi.ru
Ресей, Politekhnicheskaya ul. 26, St. Petersburg, 194021; Rizhskii proezd 26, St. Petersburg, 190103