Email this article Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by \({\text{O}}_{2}^{ + }\) Ion Implantation
- Authors: Umirzakov B.E.1, Ruzibaeva M.K.1, Isakhanov Z.A.1, Erkulov R.M.1
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Affiliations:
- Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
- Issue: Vol 64, No 6 (2019)
- Pages: 881-883
- Section: Physics of Nanostructures
- URL: https://journals.rcsi.science/1063-7842/article/view/203632
- DOI: https://doi.org/10.1134/S1063784219060239
- ID: 203632
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Abstract
The composition and parameters of energy bands in thin SiO2 films grown on the surface of a free Si/Cu film system have been studied. It has been shown that unlike SiO2 films grown on thick films, the value of Eg for thin SiO2 films is no higher than ~4.1 eV. This is explained by the presence of Si impurity atoms and nonstoichiometric oxides in the SiO2 film, which arise because of the impossibility of heating the system above 700 K.
About the authors
B. E. Umirzakov
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Email: za.isakhanov@gmail.com
Uzbekistan, Tashkent, 100125
M. K. Ruzibaeva
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Email: za.isakhanov@gmail.com
Uzbekistan, Tashkent, 100125
Z. A. Isakhanov
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Author for correspondence.
Email: za.isakhanov@gmail.com
Uzbekistan, Tashkent, 100125
R. M. Erkulov
Institute of Ion-Plasma Technologies, Academy of Sciences of Uzbekistan
Email: za.isakhanov@gmail.com
Uzbekistan, Tashkent, 100125
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