Application of the solution–melt method for obtaining composite materials consisting of a metal matrix and CrSi2 microcrystals
- 作者: Solomkin F.Y.1, Novikov S.V.1, Kartenko N.F.1, Kolosova A.S.1, Pshenai-Severin D.A.1,2, Uryupin O.N.1, Samunin A.Y.1, Isachenko G.N.1,2
- 
							隶属关系: 
							- Ioffe Physical Technical Institute
- University of Information Technologies, Mechanics, and Optics
 
- 期: 卷 61, 编号 1 (2016)
- 页面: 153-156
- 栏目: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/196800
- DOI: https://doi.org/10.1134/S1063784216010205
- ID: 196800
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The possibility of obtaining composite materials in which the metal matrix is filled with CrSi2 needle microcrystals is considered. It is shown that it is possible in principle to obtain a regular structure of CrSi2 microcrystals in metal matrices of tin, aluminum, and their alloys. During chemical etching, a part of the matrix volume is dissolved, releasing “rods” of the semiconducting material. The thermoelectric parameters of such a system are estimated on the basis of the measured physical properties.
作者简介
F. Solomkin
Ioffe Physical Technical Institute
							编辑信件的主要联系方式.
							Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021						
S. Novikov
Ioffe Physical Technical Institute
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021						
N. Kartenko
Ioffe Physical Technical Institute
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021						
A. Kolosova
Ioffe Physical Technical Institute
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021						
D. Pshenai-Severin
Ioffe Physical Technical Institute; University of Information Technologies, Mechanics, and Optics
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021; Kronverkskii pr. 49, St. Petersburg, 197101						
O. Uryupin
Ioffe Physical Technical Institute
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021						
A. Samunin
Ioffe Physical Technical Institute
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021						
G. Isachenko
Ioffe Physical Technical Institute; University of Information Technologies, Mechanics, and Optics
														Email: f.solomkin@mail.ioffe.ru
				                					                																			                												                	俄罗斯联邦, 							Politekhnicheskaya ul. 26, St. Petersburg, 194021; Kronverkskii pr. 49, St. Petersburg, 197101						
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