Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films
- Authors: Lebedev S.P.1, Barash I.S.1, Eliseyev I.A.1, Dementev P.A.1, Lebedev A.A.1,2, Bulat P.V.3
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Affiliations:
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI
- ITMO University
- Issue: Vol 64, No 12 (2019)
- Pages: 1843-1849
- Section: Physics of Low-Dimensional Structures
- URL: https://journals.rcsi.science/1063-7842/article/view/204943
- DOI: https://doi.org/10.1134/S1063784219120144
- ID: 204943
Cite item
Abstract
We have studied the effect of temperature and etching duration of the 4H-SiC (0001) surface in hydrogen on the structural perfection of graphene films grown by thermal destruction. Several technological modes have been identified that enable etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pregrowth etching in hydrogen at T = 1600°C with a duration of 1 min makes it possible to obtain a more uniform and structurally perfect graphene than etching at T = 1300°C with a 30 min duration.
About the authors
S. P. Lebedev
Ioffe Institute
Author for correspondence.
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. S. Barash
Ioffe Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Eliseyev
Ioffe Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. A. Dementev
Ioffe Institute
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Lebedev
Ioffe Institute; St. Petersburg State Electrotechnical University LETI
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
P. V. Bulat
ITMO University
Email: lebedev.sergey@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
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