Sol-Gel Technology Adaptation of Nanostructured Zinc Oxide for Flexible Electronics

I. A. Averin; I. A. Pronin; N. D. Yakushova; A. A. Karmanov; E. A. Alimova; S. E. Igoshina; V. A. Moshnikov; E. I. Terukov

doi:10.1134/S1063784219120028

Sol-Gel Technology Adaptation of Nanostructured Zinc Oxide for Flexible Electronics

Authors: Averin I.A.¹, Pronin I.A.¹^,2, Yakushova N.D.¹, Karmanov A.A.¹, Alimova E.A.³, Igoshina S.E.¹, Moshnikov V.A.², Terukov E.I.²^,4
Affiliations:
1. Pensa State University
2. St. Petersburg State Electrotechnical University LETI
3. JSC Scientific Research Institute of Electro-Mechanical Devices
4. Ioffe Institute
Issue: Vol 64, No 12 (2019)
Pages: 1821-1826
Section: Physical Materials Science
URL: https://journals.rcsi.science/1063-7842/article/view/204924
DOI: https://doi.org/10.1134/S1063784219120028
ID: 204924

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Abstract

The possibility of replacing classical sol-gel operation methods of high-temperature annealing by photo-annealing using ultraviolet-range radiation has been analyzed. A technique for synthesizing hierarchically organized zinc oxide films using sol-gel technology based on the parallel combination of low-temperature treatment and UV photo-annealing is proposed. Spectroscopic studies of the qualitative composition of the film-forming sol and nanomaterials based on it, obtained on various types of substrates, have been carried out before and after initiation of photochemical reactions.

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Sol-Gel Technology Adaptation of Nanostructured Zinc Oxide for Flexible Electronics

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Abstract

About the authors

Supplementary files