Dielectric Spectroscopy as a Method for Testing Thin Vanadium Dioxide Films
- Авторлар: Il’inskii A.V.1, Kastro R.A.2, Pashkevich M.E.3, Shadrin E.B.1
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Мекемелер:
- Ioffe Institute
- Herzen State Pedagogical University of Russia
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 64, № 12 (2019)
- Беттер: 1790-1795
- Бөлім: Solid State
- URL: https://journals.rcsi.science/1063-7842/article/view/204884
- DOI: https://doi.org/10.1134/S1063784219120107
- ID: 204884
Дәйексөз келтіру
Аннотация
We have analyzed the dielectric spectra of thin (1200 Å) films of vanadium dioxide, a material with strong electron–electron correlations. We have tested both undoped and germanium-doped VO2 : Ge films. The latter exhibits an additional peak in the frequency spectrum of the tangent of the dielectric loss angle. We have analyzed the fine structure of the spectra and provided physical interpretation of two peaks on the frequency dependence of the tangent of dielectric loss angle and two semi-circles on the Cole–Cole diagram. Analysis of results has been performed based on equivalent electric circuit diagrams of samples, viz., one-loop RC circuit for the undoped VO2 film and two-loop circuit for VO2 : Ge film. The numerical values of parameters of model systems have been determined.
Авторлар туралы
A. Il’inskii
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: shard.solid@mail.ioffe.ru
Ресей, St. Petersburg, 194021
R. Kastro
Herzen State Pedagogical University of Russia
Email: shard.solid@mail.ioffe.ru
Ресей, St. Petersburg, 191186
M. Pashkevich
Peter the Great St. Petersburg Polytechnic University
Email: shard.solid@mail.ioffe.ru
Ресей, St. Petersburg, 195251
E. Shadrin
Ioffe Institute
Email: shard.solid@mail.ioffe.ru
Ресей, St. Petersburg, 194021
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