Nondestructive Control of the Surface, Layers, and Charge Carrier Concentration on SiC Substrates and Structures

A. V. Markov; M. F. Panov; V. P. Rastegaev; E. N. Sevost’yanov; V. V. Trushlyakova

doi:10.1134/S1063784219120181

Nondestructive Control of the Surface, Layers, and Charge Carrier Concentration on SiC Substrates and Structures

Authors: Markov A.V.¹, Panov M.F.¹, Rastegaev V.P.¹, Sevost’yanov E.N.¹, Trushlyakova V.V.¹
Affiliations:
1. St. Petersburg State Electrotechnical University LETI
Issue: Vol 64, No 12 (2019)
Pages: 1774-1779
Section: Solid State
URL: https://journals.rcsi.science/1063-7842/article/view/204864
DOI: https://doi.org/10.1134/S1063784219120181
ID: 204864

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Abstract

Silicon carbide substrates and epitaxial structures are investigated by nondestructive contactless methods. Parameters of the disrupted surface layer and roughnesses are determined using ellipsometry and atomic force microscopy. The free charge carrier concentration is determined by IR spectroscopy. The thicknesses in the multilayer epitaxial structure on SiC are determined using IR spectroscopy and scanning electron microscopy.