Development of Technological Principles for Creating a System of Microfocus X-Ray Tubes Based on Silicon Field Emission Nanocathodes
- Authors: Djuzhev N.A.1, Demin G.D.1, Filippov N.A.1, Evsikov I.D.1, Glagolev P.Y.1, Makhiboroda M.A.1, Chkhalo N.I.2, Salashchenko N.N.2, Filippov S.V.3, Kolosko A.G.3, Popov E.O.3, Bespalov V.A.1
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Affiliations:
- National Research University of Electronic Technology MIET
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Ioffe Institute
- Issue: Vol 64, No 12 (2019)
- Pages: 1742-1748
- Section: 23rd INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS,” Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7842/article/view/204831
- DOI: https://doi.org/10.1134/S1063784219120053
- ID: 204831
Cite item
Abstract
The technological prospects for the creation of a system of microfocus X-ray tubes with the use of silicon field emission of nanocathodes have been discussed. A numerical analysis of the field-emission current from a nanoscale semiconductor cathode regulated by voltage on a grid electrode has been carried out on the basis of which a scheme for controlling the elements of the matrix of field-emission cathode assemblies has been proposed. The current–voltage characteristics of silicon field emission nanocathodes have been measured. They are in good agreement with the theoretical estimates of the field-emission current. A full technological cycle of the development of elements of microfocus X-ray tubes (a set of field-emission cathode assemblies and a set of anode assemblies) has been performed. The results can be used to create systems of microfocus X-ray tubes for nanolithographic equipment of a new generation.
About the authors
N. A. Djuzhev
National Research University of Electronic Technology MIET
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498
G. D. Demin
National Research University of Electronic Technology MIET
Author for correspondence.
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498
N. A. Filippov
National Research University of Electronic Technology MIET
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498
I. D. Evsikov
National Research University of Electronic Technology MIET
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498
P. Yu. Glagolev
National Research University of Electronic Technology MIET
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498
M. A. Makhiboroda
National Research University of Electronic Technology MIET
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498
N. I. Chkhalo
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: gddemin@edu.miet.ru
Russian Federation, Nizhny Novgorod, 607680
N. N. Salashchenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: gddemin@edu.miet.ru
Russian Federation, Nizhny Novgorod, 607680
S. V. Filippov
Ioffe Institute
Email: gddemin@edu.miet.ru
Russian Federation, St. Petersburg, 194021
A. G. Kolosko
Ioffe Institute
Email: gddemin@edu.miet.ru
Russian Federation, St. Petersburg, 194021
E. O. Popov
Ioffe Institute
Email: gddemin@edu.miet.ru
Russian Federation, St. Petersburg, 194021
V. A. Bespalov
National Research University of Electronic Technology MIET
Email: gddemin@edu.miet.ru
Russian Federation, Zelenograd, Moscow, 124498