Dependence of Texture Tilt and Excitation Efficiency of Shear Waves for ZnO Films on Working Gas Pressure in a DC Magnetron System
- Авторы: Veselov A.G.1, Elmanov V.I.1, Kiryasova O.A.1, Nikulin Y.V.1,2
- 
							Учреждения: 
							- Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
- Chernyshevsky State University
 
- Выпуск: Том 64, № 5 (2019)
- Страницы: 730-736
- Раздел: Physical Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/203475
- DOI: https://doi.org/10.1134/S1063784219050256
- ID: 203475
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Аннотация
Dependence of the texture tilt and excitation efficiency of shear waves on the working gas pressure in an interval of 0.14–0.74 mTorr that corresponds to the transition from collisionless to almost diffusion deposition is studied for the ZnO films with a thickness of about 0.45–1.2 μm that are synthesized in a planar dc magnetron system. It is shown that an increase in the pressure from about 0.14–0.24 to 0.74 mTorr causes a decrease in the tilt angle of the column texture from ~25°–27° to ~7° and a decrease in the efficiency of acoustic excitation. Films that are synthesized at pressures of ~0.14–0.24 mTorr close to the transition from the Townsend to glow discharge exhibit the highest excitation efficiency of shear waves. For such films, the insertion loss reaches a minimum level at thicknesses of 0.45–0.75 μm and the number of echo pulses amounts to 20–40, so that the reflected sound can be observed with a delay of up to 80 μs at a length of an acoustic guiding crystal of 10 mm.
Об авторах
A. Veselov
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
							Автор, ответственный за переписку.
							Email: labsftwo@mail.ru
				                					                																			                												                	Россия, 							Saratov, 410019						
V. Elmanov
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
														Email: labsftwo@mail.ru
				                					                																			                												                	Россия, 							Saratov, 410019						
O. Kiryasova
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences
														Email: labsftwo@mail.ru
				                					                																			                												                	Россия, 							Saratov, 410019						
Yu. Nikulin
Kotel’nikov Institute of Radio Engineering and Electronics (Saratov Branch), Russian Academy of Sciences; Chernyshevsky State University
														Email: labsftwo@mail.ru
				                					                																			                												                	Россия, 							Saratov, 410019; Saratov, 410012						
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