Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes ( n -Base versus  p -Base Diodes)

P. A. Ivanov; I. V. Grekhov

doi:10.1134/S1063784218010152

Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)

Authors: Ivanov P.A.¹, Grekhov I.V.¹
Affiliations:
1. Ioffe Institute
Issue: Vol 63, No 1 (2018)
Pages: 86-89
Section: Optics
URL: https://journals.rcsi.science/1063-7842/article/view/200548
DOI: https://doi.org/10.1134/S1063784218010152
ID: 200548

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Abstract
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Abstract

The time characteristics of pulse generators based on sharp-recovery 4H : SiC drift diodes have been calculated. It has been found that the speed of n-base 4H-SiC diodes is superior to that of p-base diodes with the amplitude and initial pedestal in the output voltage (<5% of the amplitude) versus the time curve being the same.

About the authors

P. A. Ivanov

Ioffe Institute

Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021

I. V. Grekhov