Email this article Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)
- Authors: Ivanov P.A.1, Grekhov I.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 63, No 1 (2018)
- Pages: 86-89
- Section: Optics
- URL: https://journals.rcsi.science/1063-7842/article/view/200548
- DOI: https://doi.org/10.1134/S1063784218010152
- ID: 200548
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Abstract
The time characteristics of pulse generators based on sharp-recovery 4H : SiC drift diodes have been calculated. It has been found that the speed of n-base 4H-SiC diodes is superior to that of p-base diodes with the amplitude and initial pedestal in the output voltage (<5% of the amplitude) versus the time curve being the same.
About the authors
P. A. Ivanov
Ioffe Institute
Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
I. V. Grekhov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, Politekhnicheskaya ul. 26, St. Petersburg, 194021
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