Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

Abstract

Optical and transport properties of the heterostructure with the InAs/GaAs quantum dots doped with manganese or chromium atoms in the course of growth using metal-organic vapor phase epitaxy (MOVPE) are analyzed. Circularly polarized luminescence was obtained due to doping of quantum dots with the Mn or Cr atoms. The sign of the degree of circular polarization was found to depend on the dopant. The effect is interpreted using specific features of the radiative recombination in quantum dots in the presence of resident electrons and holes.