Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
- Authors: Andreev A.A.1, Vavilova E.A.1, Ezubchenko I.S.1, Zanaveskin M.L.1, Maiboroda I.O.1
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Affiliations:
- National Research Center Kurchatov Institute
- Issue: Vol 62, No 8 (2017)
- Pages: 1288-1291
- Section: Short Communications
- URL: https://journals.rcsi.science/1063-7842/article/view/199915
- DOI: https://doi.org/10.1134/S1063784217080035
- ID: 199915
Cite item
Abstract
The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors has been studied. It has been found that thin GaN layers deposited in situ at 550°C do not exhibit polar properties and do not change the carrier concentration in the 2DEG. However, GaN layers deposited at 830°C decrease the carrier concentration in the 2DEG, which is in agreement with theoretical calculations. Using the reflected high-energy electron diffraction technique, it has been established that this effect may be associated with different structures and morphologies of GaN layers deposited at different temperatures.
About the authors
A. A. Andreev
National Research Center Kurchatov Institute
Email: ezivan9@gmail.com
Russian Federation, Moscow, 123182
E. A. Vavilova
National Research Center Kurchatov Institute
Email: ezivan9@gmail.com
Russian Federation, Moscow, 123182
I. S. Ezubchenko
National Research Center Kurchatov Institute
Author for correspondence.
Email: ezivan9@gmail.com
Russian Federation, Moscow, 123182
M. L. Zanaveskin
National Research Center Kurchatov Institute
Email: ezivan9@gmail.com
Russian Federation, Moscow, 123182
I. O. Maiboroda
National Research Center Kurchatov Institute
Email: ezivan9@gmail.com
Russian Federation, Moscow, 123182