MBE-grown InSb photodetector arrays


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Аннотация

The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.

Авторлар туралы

A. Bakarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: bakarov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

A. Gutakovskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: bakarov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: bakarov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

A. Kovchavtsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: bakarov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

A. Toropov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: bakarov@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

I. Burlakov

AO NPO Orion

Email: bakarov@isp.nsc.ru
Ресей, ul. Kosinskaya 9, Moscow, 119991

K. Boltar’

AO NPO Orion

Email: bakarov@isp.nsc.ru
Ресей, ul. Kosinskaya 9, Moscow, 119991

P. Vlasov

AO NPO Orion

Email: bakarov@isp.nsc.ru
Ресей, ul. Kosinskaya 9, Moscow, 119991

A. Lopukhin

AO NPO Orion

Email: bakarov@isp.nsc.ru
Ресей, ul. Kosinskaya 9, Moscow, 119991

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